IRF2807ZSTRRPBF
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- Mfr.Part #
- IRF2807ZSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 7,560
- In Stock ：
- 7,560
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 120ns
- Published :
- 2010
- Width :
- 9.65mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 40 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Height :
- 4.826mm
- Rds On (Max) @ Id, Vgs :
- 9.4mOhm @ 53A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- D2PAK
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 170W Tc
- Fall Time (Typ) :
- 130 ns
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Power Dissipation :
- 170W
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 75V
- Drain to Source Breakdown Voltage :
- 40V
- Input Capacitance :
- 3.27nF
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3270pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 75A
- Length :
- 10.668mm
- Drain to Source Resistance :
- 2MOhm
- Turn On Delay Time :
- 18 ns
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Rds On Max :
- 9.4 mΩ
- Min Operating Temperature :
- -55°C
- Datasheets
- IRF2807ZSTRRPBF
N-Channel Tape & Reel (TR) 9.4mOhm @ 53A, 10V ±20V 3270pF @ 25V 110nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZSTRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.This device has a drain-to-source resistance of 2mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 75V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF2807ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 2mOhm
a 75V drain to source voltage (Vdss)
IRF2807ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF2807ZSTRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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