IRF2807ZSPBF
- Mfr.Part #
- IRF2807ZSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 12,535
- In Stock :
- 12,535
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 75V
- Rise Time :
- 79ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 53A, 10V
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation :
- 170W
- Published :
- 2003
- Voltage - Rated DC :
- 75V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 89A
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 40 ns
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Dual Supply Voltage :
- 75V
- Series :
- HEXFET®
- Current Rating :
- 75A
- Turn On Delay Time :
- 18 ns
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Resistance :
- 9.4mOhm
- ECCN Code :
- EAR99
- Threshold Voltage :
- 4V
- Fall Time (Typ) :
- 45 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Height :
- 4.83mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Width :
- 9.65mm
- Length :
- 10.67mm
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 3270pF @ 25V
- Mount :
- Surface Mount
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Nominal Vgs :
- 4 V
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 170W Tc
- Datasheets
- IRF2807ZSPBF

N-Channel Tube 9.4m Ω @ 53A, 10V ±20V 3270pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZSPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3270pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.A device's drain current is its maximum continuous current, and this device's drain current is 89A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).
IRF2807ZSPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 40 ns
a threshold voltage of 4V
IRF2807ZSPBF Applications
There are a lot of Infineon Technologies
IRF2807ZSPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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