IRF2807ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Series :

HEXFET®

Packaging :

Tube

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V

Length :

10.668mm

Mounting Type :

Through Hole

FET Type :

N-Channel

Lead Free :

Contains Lead, Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Height :

9.017mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Radiation Hardening :

No

Vgs (Max) :

±20V

Rise Time :

79ns

Resistance :

9.4Ohm

Element Configuration :

Single

Number of Terminations :

3

Drain to Source Breakdown Voltage :

75V

Fall Time (Typ) :

45 ns

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mount :

Through Hole

ECCN Code :

EAR99

Number of Elements :

1

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Current Rating :

75A

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

170W Tc

Continuous Drain Current (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Voltage - Rated DC :

75V

Turn On Delay Time :

18 ns

Package / Case :

TO-220-3

Dual Supply Voltage :

75V

Power Dissipation :

170W

Width :

4.826mm