IRF2807ZLPBF
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- Mfr.Part #
- IRF2807ZLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO262
- Stock
- 17,120
- In Stock ：
- 17,120
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Published :
- 2004
- Rise Time :
- 79ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 75V
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.826mm
- Continuous Drain Current (ID) :
- 75A
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3270pF @ 25V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 40 ns
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 170W Tc
- Series :
- HEXFET®
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Lead Free :
- Lead Free
- Resistance :
- 9.4mOhm
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 53A, 10V
- Turn On Delay Time :
- 18 ns
- Length :
- 10.668mm
- Voltage - Rated DC :
- 75V
- Height :
- 9.65mm
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Fall Time (Typ) :
- 45 ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Current Rating :
- 75A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 170W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRF2807ZLPBF
N-Channel Tube 9.4m Ω @ 53A, 10V ±20V 3270pF @ 25V 110nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF2807ZLPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3270pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.With a drain-source breakdown voltage of 75V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 75V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IRF2807ZLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 40 ns
IRF2807ZLPBF Applications
There are a lot of Infineon Technologies
IRF2807ZLPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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