IRF2807ZL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

No

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

75V

Published :

2003

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

170W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

350A

Avalanche Energy Rating (Eas) :

200 mJ

Vgs (Max) :

±20V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.0094Ohm

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

75V

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V