IRF2807Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Drain-source On Resistance-Max :

0.0094Ohm

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Elements :

1

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

75V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Series :

HEXFET®

Power Dissipation-Max :

170W Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

350A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

160 mJ

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

75V

Published :

2003

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE