IRF2807PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Surface Mount, Through Hole

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Voltage - Rated DC :

75V

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

48 ns

Peak Reflow Temperature (Cel) :

250

Threshold Voltage :

4V

Current Rating :

82A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Width :

4.69mm

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

75V

Height :

8.77mm

Power Dissipation-Max :

230W Tc

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

75V

Published :

2001

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Rise Time :

64ns

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

280A

Series :

HEXFET®

FET Type :

N-Channel

Resistance :

13mOhm

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Number of Terminations :

3

Recovery Time :

150 ns

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

Continuous Drain Current (ID) :

82A

Lead Pitch :

2.54mm

Lead Free :

Contains Lead, Lead Free

Case Connection :

DRAIN

Turn-Off Delay Time :

49 ns

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.54mm

Radiation Hardening :

No

Power Dissipation :

230W

Package / Case :

TO-220-3