IRF2805STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Power Dissipation-Max :

200W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Breakdown Voltage :

55V

Pulsed Drain Current-Max (IDM) :

700A

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Length :

10.668mm

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

75A

Height :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

135A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Rise Time :

120ns

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

4.7ohm

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 104A, 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

110 ns

Case Connection :

DRAIN

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

135A

Input Capacitance (Ciss) (Max) @ Vds :

5110pF @ 25V

Radiation Hardening :

No

Published :

2007

Element Configuration :

Single

Number of Terminations :

2

Power Dissipation :

200W

Mount :

Surface Mount

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Type :

N-Channel

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

68 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

14 Weeks

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB