IRF2805PBF
- Mfr.Part #
- IRF2805PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220AB
- Stock
- 23,270
- In Stock :
- 23,270
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 330W Tc
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Threshold Voltage :
- 4V
- Pulsed Drain Current-Max (IDM) :
- 700A
- Nominal Vgs :
- 4 V
- Package / Case :
- TO-220-3
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 14 ns
- Drain to Source Breakdown Voltage :
- 55V
- Power Dissipation :
- 330W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 75A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 68 ns
- Rise Time :
- 120ns
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Fall Time (Typ) :
- 110 ns
- Current Rating :
- 75A
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Voltage - Rated DC :
- 55V
- Height :
- 16.51mm
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Width :
- 4.826mm
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Dual Supply Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.668mm
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2002
- Recovery Time :
- 120 ns
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 4.7ohm
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Datasheets
- IRF2805PBF

N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-220-3
IRF2805PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 700A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF2805PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 700A.
a threshold voltage of 4V
IRF2805PBF Applications
There are a lot of Infineon Technologies
IRF2805PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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