IRF2805LPBF
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- Mfr.Part #
- IRF2805LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 135A TO262
- Stock
- 9,008
- In Stock ：
- 9,008
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 4.826mm
- Fall Time (Typ) :
- 110 ns
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Power Dissipation-Max :
- 200W Tc
- Series :
- HEXFET®
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Rise Time :
- 120ns
- Turn-Off Delay Time :
- 68 ns
- Vgs (Max) :
- ±20V
- Published :
- 2010
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.668mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 135A Tc
- Current Rating :
- 135A
- Radiation Hardening :
- No
- Power Dissipation :
- 200W
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 14 ns
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Voltage - Rated DC :
- 55V
- Continuous Drain Current (ID) :
- 135A
- Height :
- 9.65mm
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Datasheets
- IRF2805LPBF
N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF2805LPBF Overview
The maximum input capacitance of this device is 5110pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 68 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRF2805LPBF Features
a continuous drain current (ID) of 135A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
IRF2805LPBF Applications
There are a lot of Infineon Technologies
IRF2805LPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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