IRF2804STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

75A

Power Dissipation-Max :

300W Tc

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

40V

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.002Ohm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

540 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Pulsed Drain Current-Max (IDM) :

1080A

Surface Mount :

yes

Factory Lead Time :

10 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier