IRF2804STRR7PP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Element Configuration :

Single

Rise Time :

120ns

Turn On Delay Time :

13 ns

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

6.93nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

330W Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Mount :

Surface Mount

Turn-Off Delay Time :

130 ns

Supplier Device Package :

D2PAK (7-Lead)

Continuous Drain Current (ID) :

160A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Fall Time (Typ) :

130 ns

Power Dissipation :

330W

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Drain to Source Resistance :

2MOhm

Rds On Max :

1.6 mΩ

Drain to Source Breakdown Voltage :

40V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Series :

HEXFET®

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

40V

Max Operating Temperature :

175°C

Published :

2005

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V