IRF2804STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Power Dissipation :

300W

Transistor Application :

SWITCHING

Fall Time (Typ) :

130 ns

Avalanche Energy Rating (Eas) :

540 mJ

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

Drain to Source Breakdown Voltage :

40V

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

75A

Voltage - Rated DC :

40V

Terminal Form :

Gull wing

Resistance :

2MOhm

Number of Channels :

1

Lead Free :

Contains Lead

Turn-Off Delay Time :

130 ns

Threshold Voltage :

4V

Height :

4.83mm

Turn On Delay Time :

13 ns

JESD-609 Code :

e3

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

300W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

270A

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Max Junction Temperature (Tj) :

175°C

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

84 ns

Current Rating :

75A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rise Time :

120ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Number of Pins :

3

Number of Elements :

1

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Length :

10.668mm