IRF2804STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Elements :

1

Turn On Delay Time :

13 ns

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Mount :

Surface Mount

Voltage - Rated DC :

40V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

130 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

270A

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

Number of Channels :

1

Rise Time :

120ns

Transistor Element Material :

SILICON

Element Configuration :

Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

300W Tc

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

300W

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Width :

9.65mm

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Junction Temperature (Tj) :

175°C

Current Rating :

75A

Published :

2003

Length :

10.668mm

Recovery Time :

84 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Continuous Drain Current (ID) :

75A

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

130 ns

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

540 mJ

FET Type :

N-Channel

Height :

4.83mm

Case Connection :

DRAIN

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Radiation Hardening :

No

Resistance :

2MOhm