IRF2804SPBF
- Mfr.Part #
- IRF2804SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A D2PAK
- Stock
- 66,674
- In Stock :
- 66,674
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 75A, 10V
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6450pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Series :
- HEXFET®
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 40V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Published :
- 2003
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 300W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IRF2804SPBF

N-Channel Tube 2m Ω @ 75A, 10V ±20V 6450pF @ 25V 240nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2804SPBF Description
The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of other applications.
IRF2804SPBF Features
-
Advanced Process Technology
-
Ultra-Low On-Resistance
-
175°C Operating Temperature
-
Fast Switching
-
Repetitive Avalanche Allowed up to Tjmax
-
Lead-Free
IRF2804SPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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