IRF2804S-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

1050 mJ

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G6

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

1360A

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Power Dissipation-Max :

330W Tc

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Drain to Source Voltage (Vdss) :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0016Ohm

JESD-609 Code :

e3

Packaging :

Tube

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

160A

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel