IRF2804LPBF
- Mfr.Part #
- IRF2804LPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IRF2804 - 12V-300V N-CHANNEL POW
- Stock
- 10,673
- In Stock :
- 10,673
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 75A, 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Current Rating :
- 75A
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 130 ns
- Avalanche Energy Rating (Eas) :
- 540 mJ
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Width :
- 4.826mm
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 4V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 330W
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 120ns
- Length :
- 10.668mm
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 13 ns
- Drain to Source Breakdown Voltage :
- 40V
- Power Dissipation-Max :
- 300W Tc
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Continuous Drain Current (ID) :
- 75A
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 6450pF @ 25V
- Number of Elements :
- 1
- Height :
- 9.652mm
- Fall Time (Typ) :
- 130 ns
- Datasheets
- IRF2804LPBF

N-Channel Tube 2.3m Ω @ 75A, 10V 6450pF @ 25V 240nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF2804LPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 540 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6450pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.
IRF2804LPBF Features
the avalanche energy rating (Eas) is 540 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
a threshold voltage of 4V
IRF2804LPBF Applications
There are a lot of Infineon Technologies
IRF2804LPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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