IRF2804LPBF
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- Mfr.Part #
- IRF2804LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A TO262
- Stock
- 10,673
- In Stock ：
- 10,673
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 120ns
- Width :
- 4.826mm
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 75A, 10V
- Drain to Source Breakdown Voltage :
- 40V
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Power Dissipation :
- 330W
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 130 ns
- Published :
- 2003
- Turn On Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 75A
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Length :
- 10.668mm
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 40V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 300W Tc
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Fall Time (Typ) :
- 130 ns
- Series :
- HEXFET®
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Height :
- 9.652mm
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 540 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 75A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6450pF @ 25V
- Datasheets
- IRF2804LPBF
N-Channel Tube 2.3m Ω @ 75A, 10V 6450pF @ 25V 240nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF2804LPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 540 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6450pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.
IRF2804LPBF Features
the avalanche energy rating (Eas) is 540 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 130 ns
a threshold voltage of 4V
IRF2804LPBF Applications
There are a lot of Infineon Technologies
IRF2804LPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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