IRF241

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package Shape :

Round

Continuous Drain Current (ID) :

18 A

Power Dissipation (Max) :

125W

Terminal Form :

PIN/PEG

Package / Case :

TO-204AE

Rds On (Max) @ Id, Vgs :

-

Manufacturer :

Rochester Electronics LLC

Series :

HEXFET?

Number of Elements :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

150 V

Terminal Position :

BOTTOM

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-204AE

Package :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

-

Operating Mode :

ENHANCEMENT MODE

Pin Count :

2

FET Feature :

-

Pulsed Drain Current-Max (IDM) :

72 A

Drain-source On Resistance-Max :

0.18 Ω

Operating Temperature :

-

Supplier Device Package :

TO-204AE

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

JESD-30 Code :

O-MBFM-P2

Configuration :

Single

Case Connection :

DRAIN

Number of Terminals :

2

Drain to Source Resistance :

180 mΩ

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

150 V

Product Status :

Active

RoHS :

Compliant

Vgs (Max) :

-