IRF1010ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

360A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

55V

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

140W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Surface Mount :

yes

Transistor Application :

SWITCHING

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0075Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

130 mJ

Packaging :

Tube

Case Connection :

DRAIN

Terminal Form :

Gull wing

Published :

2003

JESD-30 Code :

R-PSSO-G2