IPU50R950CEAKMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain-source On Resistance-Max :

0.95Ohm

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

6 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Surface Mount :

No

Avalanche Energy Rating (Eas) :

68 mJ

Pulsed Drain Current-Max (IDM) :

12.8A

Drive Voltage (Max Rds On,Min Rds On) :

13V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

231pF @ 100V

DS Breakdown Voltage-Min :

500V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

53W Tc

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.2A, 13V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Series :

CoolMOS™ CE

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Packaging :

Tube