IPU50R1K4CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

42W Tc

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 900mA, 13V

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™ CE

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

8.8A

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Packaging :

Tube

DS Breakdown Voltage-Min :

500V

Factory Lead Time :

6 Weeks

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

49 mJ

Input Capacitance (Ciss) (Max) @ Vds :

178pF @ 100V

Surface Mount :

No

Drain to Source Voltage (Vdss) :

500V

JESD-609 Code :

e3