IPU50R3K0CEBKMA1
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- Mfr.Part #
- IPU50R3K0CEBKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 1.7A TO251-3
- Stock
- 42,551
- In Stock ：
- 42,551
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Max Dual Supply Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 1.7A
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 18W Tc
- Fall Time (Typ) :
- 49 ns
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 400mA, 13V
- Vgs(th) (Max) @ Id :
- 3.5V @ 30μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- CoolMOS™ CE
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Published :
- 2013
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 550V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.3nC @ 10V
- Turn-Off Delay Time :
- 23 ns
- Pulsed Drain Current-Max (IDM) :
- 4.1A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Avalanche Energy Rating (Eas) :
- 18 mJ
- Height :
- 6.22mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 84pF @ 100V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount, Through Hole
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Tc
- Drain-source On Resistance-Max :
- 3Ohm
- Rise Time :
- 5.8ns
- Length :
- 6.73mm
- Transistor Element Material :
- SILICON
- Width :
- 2.41mm
- Turn On Delay Time :
- 7.3 ns
- Pbfree Code :
- No
- Datasheets
- IPU50R3K0CEBKMA1
N-Channel Tube 3 Ω @ 400mA, 13V ±20V 84pF @ 100V 4.3nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
IPU50R3K0CEBKMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 18 mJ.A device's maximal input capacitance is 84pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4.1A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 500V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (13V).
IPU50R3K0CEBKMA1 Features
the avalanche energy rating (Eas) is 18 mJ
a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 4.1A.
IPU50R3K0CEBKMA1 Applications
There are a lot of Infineon Technologies
IPU50R3K0CEBKMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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