IPU50R1K4CEBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Published :

2013

Turn On Delay Time :

6.5 ns

Fall Time (Typ) :

30 ns

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Continuous Drain Current (ID) :

3.1A

Mount :

Through Hole

Packaging :

Tube

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Drive Voltage (Max Rds On,Min Rds On) :

13V

Input Capacitance (Ciss) (Max) @ Vds :

178pF @ 100V

Power Dissipation :

25W

Turn-Off Delay Time :

23 ns

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Drain to Source Voltage (Vdss) :

500V

Length :

6.73mm

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 900mA, 13V

Height :

6.22mm

Power Dissipation-Max :

25W Tc

Series :

CoolMOS™

ECCN Code :

EAR99

Rise Time :

6ns

Width :

2.41mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel