IPU50R3K0CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Series :

CoolMOS™ CE

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

DS Breakdown Voltage-Min :

500V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Input Capacitance (Ciss) (Max) @ Vds :

84pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

4.3nC @ 10V

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

13V

Drain-source On Resistance-Max :

3Ohm

Avalanche Energy Rating (Eas) :

18 mJ

Surface Mount :

No

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

Packaging :

Tube

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

4.1A

Mounting Type :

Through Hole

JESD-609 Code :

e3

Power Dissipation-Max :

26W Tc

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 13V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs (Max) :

±20V