IPU50R950CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

53W (Tc)

Pin Count :

3 +Tab

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

Mounting :

Through Hole

Packaging :

Rail/Tube

Package Type :

TO-251

Product Status :

Active

Drain-Source On-Volt :

500(V)

Height :

6.22 mm

Package :

Bulk

Rise Time :

4.9 ns

FET Type :

N-Channel

Continuous Drain Current :

4.3(A)

RoHS :

Details

Length :

6.73 mm

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

231 pF @ 100 V

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Polarity :

N

Width :

2.38 mm

Supplier Device Package :

PG-TO251-3

Gate Charge (Qg) (Max) @ Vgs :

10.5 nC @ 10 V

Configuration :

Single

Channel Type :

N

Gate-Source Voltage (Max) :

20(V)

Continuous Drain Current Id :

6.6

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Infineon

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Brand :

Infineon Technologies

Technology :

Si

Drain to Source Voltage (Vdss) :

500 V

Operating Temperature Classification :

Military

Rad Hardened :

No

Drive Voltage (Max Rds On, Min Rds On) :

13V

Subcategory :

MOSFETs

Operating Temp Range :

-55C to 150C

Package / Case :

TO-251-3

Number of Elements :

1

Product Type :

MOSFET

Type :

Power MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Tradename :

CoolMOS

Current - Continuous Drain (Id) @ 25°C :

6.6A (Tc)

Product Category :

MOSFET

Power Dissipation :

53

Mounting Type :

Through Hole

Channel Mode :

Enhancement

Series :

CoolMOS CE