IPT65R195G7XTMA1

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Mfr.Part #
IPT65R195G7XTMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerSFN
Datasheet
Download
Description
MOSFET N-CH 650V 14A 8HSOF
Stock
66,000
In Stock :
66,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
97W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Drain to Source Voltage (Vdss) :
650V
Rds On (Max) @ Id, Vgs :
195m Ω @ 4.8A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Packaging :
Tape and Reel (TR)
Package / Case :
8-PowerSFN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Published :
2013
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
996pF @ 400V
ECCN Code :
EAR99
Pbfree Code :
yes
Series :
CoolMOS™ C7
Factory Lead Time :
18 Weeks
Vgs(th) (Max) @ Id :
4V @ 240µA
Datasheets
IPT65R195G7XTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPT65R195G7XTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerSFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, IPT65R195G7XTMA1 pinout, IPT65R195G7XTMA1 datasheet PDF, IPT65R195G7XTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPT65R195G7XTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPT65R195G7XTMA1


N-Channel Tape & Reel (TR) 195m Ω @ 4.8A, 10V ±20V 996pF @ 400V 20nC @ 10V 650V 8-PowerSFN

IPT65R195G7XTMA1 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 996pF @ 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.

IPT65R195G7XTMA1 Features


a 650V drain to source voltage (Vdss)


IPT65R195G7XTMA1 Applications


There are a lot of Infineon Technologies
IPT65R195G7XTMA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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