IPT60R102G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

102m Ω @ 7.8A, 10V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

23A

Terminal Form :

Flat

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

78 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Drain-source On Resistance-Max :

0.102Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

23A Tc

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

141W Tc

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 400V

JESD-30 Code :

R-PSSO-F3

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Case Connection :

DRAIN

FET Type :

N-Channel

ECCN Code :

EAR99

Series :

CoolMOS™ G7

Transistor Application :

SWITCHING

Package / Case :

8-PowerSFN

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 390μA

Published :

2014

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

66A

Packaging :

Tape and Reel (TR)

Surface Mount :

yes