IPT60R028G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

100 ns

Transistor Application :

SWITCHING

Terminal Position :

Single

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

28m Ω @ 28.8A, 10V

JESD-30 Code :

R-PSSO-F3

Terminal Finish :

Tin (Sn)

Power Dissipation :

391W

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

28 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain to Source Breakdown Voltage :

600V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 1.44mA

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

288 mJ

Published :

2014

Package / Case :

8-PowerSFN

Drain-source On Resistance-Max :

0.028Ohm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

245A

Power Dissipation-Max :

391W Tc

Pbfree Code :

yes

Vgs (Max) :

±20V

FET Type :

N-Channel

Height :

2.4mm

Number of Terminations :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Manufacturer Package Identifier :

PG-HSOF-8

Case Connection :

DRAIN

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Series :

CoolMOS™ G7