IPT60R050G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

245W Tc

Avalanche Energy Rating (Eas) :

159 mJ

Vgs(th) (Max) @ Id :

4V @ 800μA

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

135A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Drain-source On Resistance-Max :

0.05Ohm

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-F3

Package / Case :

8-PowerSFN

Series :

CoolMOS™ G7

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

50m Ω @ 15.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 400V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

44A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON