IPT60R050G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

44A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Published :

2014

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Series :

CoolMOS™ G7

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 800μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-F3

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

159 mJ

Pulsed Drain Current-Max (IDM) :

135A

Vgs (Max) :

±20V

Case Connection :

DRAIN

Power Dissipation-Max :

245W Tc

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 400V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 15.9A, 10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.05Ohm

Terminal Form :

Flat

Package / Case :

8-PowerSFN