IPT60R080G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

29A Tc

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerSFN

Case Connection :

DRAIN

Turn-Off Delay Time :

61 ns

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

83A

Rds On (Max) @ Id, Vgs :

80m Ω @ 9.7A, 10V

Avalanche Energy Rating (Eas) :

97 mJ

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PSSO-F3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

167W Tc

Published :

2014

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ G7

Turn On Delay Time :

19 ns

Number of Terminations :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 490μA

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 400V

Transistor Application :

SWITCHING

Terminal Form :

Flat

Manufacturer Package Identifier :

PG-HSOF-8

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.08Ohm

Surface Mount :

yes

Drain to Source Breakdown Voltage :

600V

Height :

2.4mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Continuous Drain Current (ID) :

29A

Power Dissipation :

167W