IPT60R150G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

106W Tc

Pulsed Drain Current-Max (IDM) :

45A

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

53 mJ

Drain-source On Resistance-Max :

0.15Ohm

DS Breakdown Voltage-Min :

600V

Package / Case :

8-PowerSFN

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.3A, 10V

Series :

CoolMOS™ G7

Transistor Application :

SWITCHING

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

902pF @ 400V

Case Connection :

DRAIN

Terminal Form :

Flat

Terminal Position :

Single

Surface Mount :

yes

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-F3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 260μA

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650V