IPT60R125G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™ G7

Rds On (Max) @ Id, Vgs :

125m Ω @ 6.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Vgs(th) (Max) @ Id :

4V @ 320μA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Surface Mount :

yes

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

54A

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Power Dissipation-Max :

120W Tc

JESD-30 Code :

R-PSSO-F3

Package / Case :

8-PowerSFN

Pbfree Code :

yes

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.125Ohm

Avalanche Energy Rating (Eas) :

64 mJ

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 400V

Case Connection :

DRAIN

Terminal Form :

Flat

Number of Elements :

1

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED