IPS80R900P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Drain-source On Resistance-Max :

0.9Ohm

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Series :

CoolMOS™ P7

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

13 mJ

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

800V

JESD-609 Code :

e3

Terminal Position :

Single

Power Dissipation-Max :

45W Tc

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

14A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

6A Tc

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON