IPS80R900P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Series :

CoolMOS™ P7

Published :

2014

Avalanche Energy Rating (Eas) :

13 mJ

Drain-source On Resistance-Max :

0.9Ohm

Power Dissipation-Max :

45W Tc

DS Breakdown Voltage-Min :

800V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

14A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Drain to Source Voltage (Vdss) :

800V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA