IPS80R2K0P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2 Ω @ 940mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain-source On Resistance-Max :

2Ohm

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

6 mJ

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Surface Mount :

No

Reach Compliance Code :

not_compliant

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

6A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.5V @ 50μA

Series :

CoolMOS™ P7

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 500V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

24W Tc

Published :

2014

Terminal Finish :

Tin (Sn)