IPS80R1K4P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 700μA

Avalanche Energy Rating (Eas) :

8 mJ

Power Dissipation-Max :

32W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

8.9A

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Mount :

Through Hole

Series :

CoolMOS™

Package / Case :

TO-251-3 Stub Leads, IPak

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JESD-609 Code :

e3

Continuous Drain Current (ID) :

4A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

FET Feature :

Super Junction

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

800V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Terminations :

3

Published :

2013