IPS80R600P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

22A

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 500V

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

60W Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Drain-source On Resistance-Max :

0.6Ohm

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ P7

FET Type :

N-Channel

Package / Case :

TO-251-3 Stub Leads, IPak

Surface Mount :

No

DS Breakdown Voltage-Min :

800V

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

20 mJ