IPS80R1K2P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

37W Tc

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.7A, 10V

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Published :

2014

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Series :

CoolMOS™ P7

Package / Case :

TO-251-3 Stub Leads, IPak

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

11A

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 80μA

Avalanche Energy Rating (Eas) :

10 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

800V

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 500V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE