IPS80R2K4P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

22W Tc

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

ECCN Code :

EAR99

Surface Mount :

No

Number of Terminations :

3

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 800mA, 10V

Avalanche Energy Rating (Eas) :

4 mJ

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Number of Elements :

1

Published :

2014

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

DS Breakdown Voltage-Min :

800V

Pulsed Drain Current-Max (IDM) :

5.3A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 500V

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ P7

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

18 Weeks