IPP50R520CPXKSA1
- Mfr.Part #
- IPP50R520CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7.1A TO220-3
- Stock
- 29,476
- In Stock :
- 29,476
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2008
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 7.1A Tc
- Number of Terminations :
- 3
- Turn On Delay Time :
- 35 ns
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 17 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 100V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.52Ohm
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Power Dissipation :
- 66W
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 66W Tc
- Number of Pins :
- 3
- Rise Time :
- 14ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 166 mJ
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 15A
- Rds On (Max) @ Id, Vgs :
- 520m Ω @ 3.8A, 10V
- Packaging :
- Tube
- Series :
- CoolMOS™
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 550V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 7.1A
- Turn-Off Delay Time :
- 80 ns
- Qualification Status :
- Not Qualified
- Max Dual Supply Voltage :
- 500V
- Vgs (Max) :
- ±20V
- Datasheets
- IPP50R520CPXKSA1

N-Channel Tube 520m Ω @ 3.8A, 10V ±20V 680pF @ 100V 17nC @ 10V TO-220-3
IPP50R520CPXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 166 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 680pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 550V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 550V.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 15A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 500V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP50R520CPXKSA1 Features
the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 7.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 15A.
IPP50R520CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP50R520CPXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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