IPP50R350CPXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

550V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

89W Tc

Rds On (Max) @ Id, Vgs :

350m Ω @ 5.6A, 10V

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Pin Count :

3

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

246 mJ

Terminal Position :

Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.35Ohm

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain Current-Max (Abs) (ID) :

10A

DS Breakdown Voltage-Min :

500V

Published :

2008

Number of Terminations :

3

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

22A

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Number of Elements :

1

Pbfree Code :

yes