IPP50R299CPHKSA1
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- Mfr.Part #
- IPP50R299CPHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 12A TO220-3
- Stock
- 12,328
- In Stock ：
- 12,328
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 1.19nF
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 100V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 80 ns
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Rds On Max :
- 299 mΩ
- Turn On Delay Time :
- 35 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Continuous Drain Current (ID) :
- 12A
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- PG-TO220-3-1
- Power Dissipation-Max :
- 104W Tc
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 12 ns
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 104W
- Series :
- CoolMOS™
- Rds On (Max) @ Id, Vgs :
- 299mOhm @ 6.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 550V
- Published :
- 2011
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 14ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPP50R299CPHKSA1
N-Channel Tube 299mOhm @ 6.6A, 10V ±20V 1190pF @ 100V 31nC @ 10V 550V TO-220-3
IPP50R299CPHKSA1 Overview
A device's maximum input capacitance is 1190pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 550V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP50R299CPHKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 80 ns
a 550V drain to source voltage (Vdss)
IPP50R299CPHKSA1 Applications
There are a lot of Infineon Technologies
IPP50R299CPHKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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