IPP16CN10NGHKSA1
- Mfr.Part #
- IPP16CN10NGHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 53A TO220-3
- Stock
- 34,187
- In Stock :
- 34,187
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Power Dissipation :
- 100W
- Packaging :
- Tube
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 53A
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- Rds On Max :
- 16.5 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3220pF @ 50V
- Published :
- 2011
- Input Capacitance :
- 3.22nF
- Rds On (Max) @ Id, Vgs :
- 16.5mOhm @ 53A, 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 27 ns
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 61μA
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 7 ns
- Rise Time :
- 14ns
- Power Dissipation-Max :
- 100W Tc
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- PG-TO220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Operating Temperature :
- 175°C
- Min Operating Temperature :
- -55°C
- Datasheets
- IPP16CN10NGHKSA1

N-Channel Tube 16.5mOhm @ 53A, 10V ±20V 3220pF @ 50V 48nC @ 10V 100V TO-220-3
IPP16CN10NGHKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3220pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 27 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP16CN10NGHKSA1 Features
a continuous drain current (ID) of 53A
the turn-off delay time is 27 ns
a 100V drain to source voltage (Vdss)
IPP16CN10NGHKSA1 Applications
There are a lot of Infineon Technologies
IPP16CN10NGHKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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