IPP100N04S2L03AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Max Dual Supply Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

100A

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

Published :

2006

Power Dissipation-Max :

300W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Series :

OptiMOS™

Terminal Position :

Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0033Ohm

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

Avalanche Energy Rating (Eas) :

810 mJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Additional Feature :

AVALANCHE RATED