IPP100N06S3L-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

82 ns

Drain to Source Breakdown Voltage :

55V

Drain-source On Resistance-Max :

0.0062Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Fall Time (Typ) :

55 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Package / Case :

TO-220-3

Current Rating :

100A

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

16V

Packaging :

Tube

Power Dissipation :

214W

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rise Time :

58ns

Power Dissipation-Max :

214W Tc

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

55V

Terminal Finish :

MATTE TIN

Published :

2007

Vgs (Max) :

±16V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

100A

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Number of Elements :

1

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

450 mJ

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

362nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

17270pF @ 25V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 150µA

Element Configuration :

Single