IPP100N04S204AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Max Dual Supply Voltage :

40V

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0036Ohm

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

OptiMOS™

Number of Terminations :

3

Power Dissipation-Max :

300W Tc

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

810 mJ

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 80A, 10V

Published :

2006

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

172nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ