IPP100N04S303AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

100A

Max Dual Supply Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.0028Ohm

Fall Time (Typ) :

17 ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Packaging :

Tube

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Turn On Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Terminal Position :

Single

Package / Case :

TO-220-3

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

400A

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 25V

Power Dissipation-Max :

214W Tc

Vgs (Max) :

±20V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power Dissipation :

214W

Rise Time :

16ns

Number of Elements :

1

Additional Feature :

ULTRA LOW RESISTANCE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

898 mJ

Turn-Off Delay Time :

46 ns

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 150μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole