IPP100N06S205AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

Weight :

6.000006g

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

55V

Number of Elements :

1

FET Type :

N-Channel

Halogen Free :

Halogen Free

Series :

OptiMOS™

Packaging :

Tube

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

5m Ω @ 80A, 10V

Power Dissipation-Max :

300W Tc

Pulsed Drain Current-Max (IDM) :

400A

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.005ohm

Input Capacitance (Ciss) (Max) @ Vds :

5110pF @ 25V

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE