IPP14N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

46W

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

30A

Rise Time :

33ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mount :

Through Hole

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

60 mJ

Turn-Off Delay Time :

17 ns

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

46W Tc

Number of Elements :

1

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Fall Time (Typ) :

2.6 ns

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Drain to Source Breakdown Voltage :

25V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0139Ohm

Pulsed Drain Current-Max (IDM) :

210A

Element Configuration :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Pin Count :

3

Voltage - Rated DC :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

30A

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 30A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 20μA

Vgs (Max) :

±20V