IPP147N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Drain-source On Resistance-Max :

0.0217Ohm

JESD-609 Code :

e3

Vgs (Max) :

±20V

Power Dissipation-Max :

31W Tc

Mounting Type :

Through Hole

ECCN Code :

EAR99

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

30V

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

20 mJ

Pbfree Code :

yes

Published :

2008

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

140A

Pin Count :

3

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Series :

OptiMOS™

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

20A

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

260